Semiconductor Device Including a Dielectric Layer

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United States of America Patent

APP PUB NO 20180012902A1
SERIAL NO

15426797

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Abstract

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A semiconductor device including a dielectric layer is provided. The semiconductor device includes a stack structure, and a vertical structure within the stack structure. The vertical structure includes a lower region having a first width and an upper region having a second width, greater than the first width. The vertical structure further includes two dielectric layers of which respective ratios of lower thicknesses in the lower region to upper thicknesses in the upper region are different from each other.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ahn, Jae Young Seongnam-si, KR 185 2843
Choi, Eun Yeoung Hwaseong-si, KR 8 27
Jang, Byong Hyun Suwon-si, KR 1 6
Kim, Bio Seoul, KR 24 346
Kim, Jung Ho Seongnam-si, KR 233 1570
Kim, Young Wan Hwaseong-si, KR 27 487
Son, Young Seon Hwaseong-si, KR 3 13

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