Semiconductor structure containing low-resistance source and drain contacts
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United States of America Patent
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Apr 2, 2019
Grant Date -
Jan 11, 2018
app pub date -
Sep 7, 2017
filing date -
Nov 21, 2014
priority date (Note) -
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Abstract
Semiconductor structures having a source contact and a drain contact that exhibit reduced contact resistance and methods of forming the same are disclosed. In one embodiment of the present application, the reduced contact resistance is provided by forming a layer of a dipole metal or metal-insulator-semiconductor (MIS) oxide between an epitaxial semiconductor material (providing the source region and the drain region of the device) and an overlying metal semiconductor alloy. In yet other embodiment, the reduced contact resistance is provided by increasing the area of the source region and drain region by patterning the epitaxial semiconductor material that constitutes at least an upper portion of the source region and drain region of the device.
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