Thinning process using metal-assisted chemical etching

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United States of America Patent

PATENT NO 9893046
SERIAL NO

15205238

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Abstract

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Methods for forming a chip package are provided. The method includes providing at least one carrier substrate including first semiconductor dies mounted thereon. The method also includes forming a first noble metal layer including nanopores irregularly distributed therein to cover each one of the first semiconductor dies. The method further includes immersing the carrier substrate with the first semiconductor dies into an etchant solution including a fluoride etchant and an oxidizing agent, so that each one of the first semiconductor dies covered by the first noble metal layer is thinned.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hsiao, Yi-Li Hsinchu, TW 62 1239
Shao, Tung-Liang Hsinchu, TW 97 792
Tung, Chih-Hang Chu-Pei, TW 103 1503
Yang, Su-Chun Hsinchu, TW 29 50
Yu, Chen-Hua Hsinchu, TW 2207 47923

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