RUTHENIUM WIRING AND MANUFACTURING METHOD THEREOF

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United States of America Patent

SERIAL NO

15637780

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Abstract

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There is provided a ruthenium wiring, including: a TiON film formed as a base film in a recess formed in a predetermined film on a surface of a substrate; and a ruthenium film formed on the TiON film so as to fill the recess.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITEDTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
FUJISATO, Toshiaki Nirasaki City, JP 23 1710
HAN, Cheonsoo Nirasaki City, JP 6 348
ISHIZAKA, Tadahiro Nirasaki City, JP 118 6906

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