Integrated circuit structure having gate contact and method of forming same
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United States of America Patent
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Nov 13, 2018
Grant Date -
Jan 11, 2018
app pub date -
Jul 11, 2016
filing date -
Jul 11, 2016
priority date (Note) -
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Abstract
One aspect of the disclosure relates to an integrated circuit structure. The integrated circuit structure may include: a gate stack having a gate conductor therein over a substrate, the gate stack being within a dielectric layer; a source/drain contact to a source/drain region over the substrate and adjacent to the gate stack within the dielectric layer; a conductor extending above, without contacting, the source/drain contact and extending within the dielectric layer to contact the gate conductor within the gate stack.
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