SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
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United States of America Patent
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Mar 21, 2017
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Jul 11, 2016
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Abstract
A semiconductor device and a method for manufacturing the same are disclosed, which guarantee an overlay margin between a contact and a metal line. A method for manufacturing a semiconductor device includes: forming a stacked insulation film in which a first interlayer insulation film, an etch stop film, and a second interlayer insulation film are sequentially stacked, over a lower structure; forming a contact hole by etching the stacked insulation film; forming a contact by burying a conductive film in the first interlayer insulation film and the etch stop film within the contact hole; and forming a metal line coupled to a top surface of the contact.
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