Passivation structure and method of making the same

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United States of America Patent

PATENT NO 10049956
APP PUB NO 20180012817A1
SERIAL NO

15700476

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Abstract

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A passivation structure includes a bottom dielectric layer. The passivation structure further includes a doped dielectric layer over the bottom dielectric layer. The doped dielectric layer includes a first doped layer and a second doped layer. The passivation structure further includes a top dielectric layer over the doped dielectric layer.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chuang, Cheng-Chi New Taipei, TW 281 426
Huang, Kun-Ming Taipei, TW 51 168
Hung, Hsuan-Hui Changhua County, TW 4 8
Lin, Ming-Yi Hsin-Chu, TW 47 298

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