FinFET device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10062614
APP PUB NO 20180012809A1
SERIAL NO

15638589

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present disclosure provides many different embodiments of a FinFET device that provide one or more improvements over the prior art. In one embodiment, a FinFET includes a semiconductor substrate and a plurality of fins having a first height and a plurality of fin having a second height on the semiconductor substrate. The second height may be less than the first height.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU

International Classification(s)

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  • 2017 Application Filing Year
  • H01L Class
  • 30754 Applications Filed
  • 25260 Patents Issued To-Date
  • 82.14 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2017201820192020202120222023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Kuang-Hsin Jung-Li, TW 79 638
Ting, Kuo-Chiang Hsinchu, TW 91 1084
Wu, Chi-Hsi Hsinchu, TW 194 3964
Yin, Joanna Chaw Yane Hsinchu, TW 12 102

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Patent Citation Ranking

  • 2 Citation Count
  • H01L Class
  • 23.71 % this patent is cited more than
  • 7 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges3689997611243481558461392216162801 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +05001000150020002500300035004000450050005500600065007000750080008500900095001000010500

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