FinFET device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10062614
APP PUB NO 20180012809A1
SERIAL NO

15638589

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Abstract

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The present disclosure provides many different embodiments of a FinFET device that provide one or more improvements over the prior art. In one embodiment, a FinFET includes a semiconductor substrate and a plurality of fins having a first height and a plurality of fin having a second height on the semiconductor substrate. The second height may be less than the first height.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Kuang-Hsin Jung-Li, TW 79 638
Ting, Kuo-Chiang Hsinchu, TW 91 1084
Wu, Chi-Hsi Hsinchu, TW 194 3964
Yin, Joanna Chaw Yane Hsinchu, TW 12 102

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