FinFET device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Aug 28, 2018
Grant Date -
Jan 11, 2018
app pub date -
Jun 30, 2017
filing date -
Jun 6, 2012
priority date (Note) -
In Force
status (Latency Note)
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Importance

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Abstract
The present disclosure provides many different embodiments of a FinFET device that provide one or more improvements over the prior art. In one embodiment, a FinFET includes a semiconductor substrate and a plurality of fins having a first height and a plurality of fin having a second height on the semiconductor substrate. The second height may be less than the first height.
First Claim
all claims..Other Claims data not available
Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD | HSINCHU |
International Classification(s)

- 2017 Application Filing Year
- H01L Class
- 30754 Applications Filed
- 25260 Patents Issued To-Date
- 82.14 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Chen, Kuang-Hsin | Jung-Li, TW | 79 | 638 |
# of filed Patents : 79 Total Citations : 638 | |||
Ting, Kuo-Chiang | Hsinchu, TW | 91 | 1084 |
# of filed Patents : 91 Total Citations : 1084 | |||
Wu, Chi-Hsi | Hsinchu, TW | 194 | 3964 |
# of filed Patents : 194 Total Citations : 3964 | |||
Yin, Joanna Chaw Yane | Hsinchu, TW | 12 | 102 |
# of filed Patents : 12 Total Citations : 102 |
Cited Art Landscape
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Patent Citation Ranking
- 2 Citation Count
- H01L Class
- 23.71 % this patent is cited more than
- 7 Age
Forward Cite Landscape
- No Forward Cites to Display

Maintenance Fees
Fee | Large entity fee | small entity fee | micro entity fee | due date |
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7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Feb 28, 2026 |
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Fee | Large entity fee | small entity fee | micro entity fee |
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Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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