Semiconductor structure with self-aligned wells and multiple channel materials
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United States of America Patent
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Apr 24, 2018
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Sep 8, 2017
filing date -
May 20, 2014
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Abstract
Embodiments of the present invention provide a semiconductor structure having a strain relaxed buffer, and method of fabrication. A strain relaxed buffer is disposed on a semiconductor substrate. A silicon region and silicon germanium region are disposed adjacent to each other on the strain relaxed buffer. An additional region of silicon or silicon germanium provides quantum well isolation.
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