INTERCONNECTS WITH INNER SACRIFICIAL SPACERS

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United States of America Patent

SERIAL NO

15202867

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Abstract

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Interconnect structures and methods of forming such interconnect structures. A spacer is formed inside an opening in a dielectric layer. After the spacer is formed, a conductive plug is formed inside the opening in the dielectric layer. After the conductive plug is formed, the spacer is removed to define an air gap located inside the opening in the dielectric layer. The air gap is located between the conductive plug and the opening in the dielectric layer.

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Patent Owner(s)

Patent OwnerAddress
GLOBALFOUNDRIES INCMAPLES CORPORATE SERVICES LIMITED PO BOX 309 UGLAND HOUSE GRAND CAYMAN KY1-1104

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fang, Qiang Ballston Lake, US 37 169
Patil, Suraj K Ballston Lake, US 24 154
Shu, Jiehui Clifton Park, US 101 232
Sun, Zhiguo Halfmoon, US 36 78

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