Structure and formation method of semiconductor device structure
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United States of America Patent
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Dec 22, 2020
Grant Date -
Jan 11, 2018
app pub date -
Sep 21, 2017
filing date -
Sep 17, 2015
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Abstract
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate. The semiconductor device structure also includes a gate stack covering a portion of the fin structure. The semiconductor device structure further includes a spacer element over a sidewall of the gate stack. The spacer element includes a first layer and a second layer over the first layer. The dielectric constant of the first layer is greater than the dielectric constant of the second layer. A gate dielectric layer of the gate stack adjoins the first layer and the second layer.
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