Structure and formation method of semiconductor device structure
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 22, 2020
Grant Date -
Jan 11, 2018
app pub date -
Sep 21, 2017
filing date -
Sep 17, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate. The semiconductor device structure also includes a gate stack covering a portion of the fin structure. The semiconductor device structure further includes a spacer element over a sidewall of the gate stack. The spacer element includes a first layer and a second layer over the first layer. The dielectric constant of the first layer is greater than the dielectric constant of the second layer. A gate dielectric layer of the gate stack adjoins the first layer and the second layer.
First Claim
Other Claims data not available
Family
International Classification(s)
- 2017 Application Filing Year
- H01L Class
- 30754 Applications Filed
- 25260 Patents Issued To-Date
- 82.14 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 0 Citation Count
- H01L Class
- 0 % this patent is cited more than
- 5 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Jun 22, 2028 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Jun 22, 2032 |
