Plasma processing apparatus and plasma processing method
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United States of America Patent
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Jun 2, 2020
Grant Date -
Jan 11, 2018
app pub date -
Feb 23, 2017
filing date -
Jul 7, 2016
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Abstract
A plasma processing, apparatus of an embodiment includes a chamber, an introducing part, a first power source, a holder, an electrode, and a second power source. The introducing part introduces gas into the chamber. The first power source outputs a first voltage for generating ions from the gas. The holder holds a substrate. The electrode is opposite to the ions across the substrate, and has a surface not parallel to the substrate. The second power source applies a second voltage to the electrode. The second voltage has a frequency lower than the frequency of the first voltage and Introduces die ions to the substrate.
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