Method of forming spacers for a gate of a transistor
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United States of America Patent
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Apr 17, 2018
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N/A
app pub date -
Jun 20, 2017
filing date -
Jun 20, 2016
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Abstract
A method for forming spacers of a gate of a field effect transistor is provided, the gate including sides and a top and being located above a layer of a semiconductor material, the method including a step of forming a dielectric layer that covers the gate; after the step of forming the dielectric layer, at least one step of modifying the dielectric layer by ion implantation while retaining non-modified portions of the dielectric layer covering sides of the gate and being at least non-modified over their entire thickness; the ions having a hydrogen base and/or a helium base; at least one step of removing the modified dielectric layer using a selective etching of the dielectric layer, wherein the removing includes a wet etching with a base of a solution including hydrofluoric acid diluted to x % by weight, with x≤0.2, and having a pH less than or equal to 1.5.
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