Method for producing a passivated semiconductor structure based on group III nitrides, and one such structure
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United States of America Patent
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Jul 23, 2019
Grant Date -
Jan 11, 2018
app pub date -
Jan 21, 2016
filing date -
Jan 21, 2015
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Abstract
The invention relates to a method for producing a semiconductor structure, characterized in that the method comprises a step (201) of depositing a crystalline passivation layer continuously covering the entire surface of a layer based on group III nitrides, said crystalline passivation layer, which is deposited from a precursor containing silicon atoms and a flow of nitrogen atoms, consisting of silicon atoms bound to the surface of the layer based on group III nitrides and arranged in a periodical arrangement such that a diffraction image of said crystalline passivation layer obtained by grazing-incidence diffraction of electrons in the direction [1-100] comprises:
- two fractional order diffraction lines (0, −⅓) and (0, −⅔) between the central line (0, 0) and the integer order line (0, −1), andtwo fractional order diffraction lines (0, ⅓) and (0, ⅔) between the central line (0, 0) and the integer order line (0, 1).
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