SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE SAME

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United States of America Patent

SERIAL NO

15642652

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Abstract

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A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR ENERGY LABORATORY CO LTDKANAGAWA KANAGAWA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
BABA, Haruyuki Isehara, JP 32 92
NAKASHIMA, Motoki Isehara, JP 65 413
YAMAZAKI, Shunpei Setagaya, JP 7526 239327

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