Charged-particle beam exposure method and charged-particle beam correction method
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United States of America Patent
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Aug 21, 2018
Grant Date -
Jan 11, 2018
app pub date -
Feb 27, 2017
filing date -
Jul 7, 2016
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Abstract
A charged-particle beam exposure method includes providing a sample that has patterns having shot densities different from each other, using the sample to obtain pattern drift values correlated with the shot densities, and irradiating the sample with a charged-particle beam to perform an exposure process on the sample. The irradiating of the sample with the charged-particle beam is carried out while a deflection voltage, which is applied to the charged-particle beam to deflect the charged-particle beam, is corrected based on the pattern drift value corresponding to a shot density of a pattern to be formed on the sample.
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