Memory device and memory system having the same

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United States of America Patent

PATENT NO 9928917
SERIAL NO

15440625

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Abstract

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A memory device includes a memory cell, a bit line connected to the memory cell, a control voltage generator configured to generate a proportional to absolute temperature (PTAT) current and generate an analog control voltage inversely proportional to the PTAT current, and a load current control circuit configured to control a first load current supplied to the bit line based on the analog control voltage.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Shin, Ho Young Gunpo-si, KR 4 11
Shin, Hyun-Jin Hwaseong-si, KR 16 68

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