Memory including bi-polar memristor
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United States of America Patent
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Jan 1, 2019
Grant Date -
Jan 11, 2018
app pub date -
Apr 30, 2015
filing date -
Apr 30, 2015
priority date (Note) -
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Abstract
A memory cell includes an input coupled to a read line, an output coupled to a circuit ground, a bi-polar memristor, and at least one address switch coupled to an address line to select the memory cell. A memory includes the bi-polar memristor and a one-way current conducting device, wherein the one-way current conducting device is positioned between the memristor cell output and the circuit ground, or between the read line and the memristor cell input.
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