Static random access memory (SRAM) assist circuit
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United States of America Patent
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Apr 24, 2018
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N/A
app pub date -
Jul 7, 2016
filing date -
Jul 7, 2016
priority date (Note) -
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a static random access memory assist circuit and methods of implementation and manufacture. The structure includes at least one static random access memory (SRAM) cell and a read assist circuit structured to apply a negative voltage to the at least one SRAM cell upon asserting of a wordline of the at least one SRAM cell.
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