Nitride semiconductor template, manufacturing method thereof, and epitaxial wafer

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United States of America Patent

PATENT NO 10472715
APP PUB NO 20180010246A1
SERIAL NO

15548069

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A nitride semiconductor template includes a heterogeneous substrate, a first nitride semiconductor layer that is formed on one surface of the heterogeneous substrate, includes a nitride semiconductor and has an in-plane thickness variation of not more than 4.0%, and a second nitride semiconductor layer that is formed on an annular region including an outer periphery of an other surface of the heterogeneous substrate, includes the nitride semiconductor and has a thickness of not less than 1 μm.

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Patent Owner(s)

Patent OwnerAddress
SUMITOMO CHEMICAL COMPANY LIMITED2-7-1 NIHONBASHI CHUO-KU TOKYO 103-6020

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujikura, Hajime Hitachi, JP 58 264
Konno, Taichiro Hitachi, JP 21 207
Nemoto, Shusei Hitachi, JP 4 10

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