Sensing a property of a fluid
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United States of America Patent
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Sep 11, 2018
Grant Date -
Jan 11, 2018
app pub date -
Apr 30, 2015
filing date -
Apr 30, 2015
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Abstract
In an example, a device for sensing a property of a fluid may include an ion-sensitive field effect transistor (ISFET) having a gate, a source, and a drain. The device may also include a first metal element in contact with the gate and a switching layer in contact with the first metal layer. A resistance state of the switching layer is to be modified through application of an electrical field of at least a predefined strength through the switching layer and is to be retained in the switching layer following removal of the electrical field. The device may also include a metal plate in contact with the switching layer, in which the metal plate is to directly contact the fluid for which the property is to be sensed.
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