Lateral light emitting diode device and method for fabricating the same
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United States of America Patent
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Jun 25, 2019
Grant Date -
Jan 4, 2018
app pub date -
Jun 21, 2017
filing date -
Jul 1, 2016
priority date (Note) -
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Abstract
Provided are a lateral light emitting diode device and a method for fabricating the same. The lateral light emitting diode device includes a substrate; an n-type GaN layer disposed on the substrate; an activation layer disposed on the n-type GaN layer; a p-type GaN layer disposed on the activation layer, a plurality of holes being formed in the p-type GaN layer; a current spreading layer disposed on the p-type GaN layer; a p-electrode disposed on the current spreading layer; a seed layer disposed on bottom surfaces of the plurality of holes; metal oxide structures grown on the seed layer in a crystalline state to fill the plurality of holes; and an n-electrode disposed on the n-type GaN layer exposed by removing portions of the current spreading layer, the p-type GaN layer, the activation layer, and the n-type GaN layer.
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