PREPARATION METHOD FOR FLAT CELL ROM DEVICE

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United States of America Patent

SERIAL NO

15547278

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Abstract

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A preparation method for a flat cell ROM device, comprising the steps of: providing a substrate, and forming a P well on the substrate; forming a photomask layer on the P well and performing photoetching to form an injection window; injecting P-type ions in the formed injection window to form a P-type region; injecting N-type ions in the injection window so as to form an N-type region on the P-type region; and forming a gate oxide layer and a poly-silicon gate so as to complete the preparation of a device.

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Patent Owner(s)

Patent OwnerAddress
CSMC TECHNOLOGIES FAB2 CO LTD214028 NO 8 XINZHOU ROAD NATIONAL HI TECH INDUSTRIAL DEVELOPMENT ZONE WUXI JIANGSU WUXI CITY JIANGSU PROVINCE 214028

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HAN, Guangtao Wuxi New District, CN 15 46
SUN, Guipeng Wuxi New District, CN 19 39
WANG, Qiong Wuxi New District, CN 96 472

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