Substrate processing method for depositing a barrier layer to prevent photoresist poisoning
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United States of America Patent
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Oct 23, 2018
Grant Date -
Jan 4, 2018
app pub date -
Jun 21, 2017
filing date -
Jul 1, 2016
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Abstract
A method for depositing a barrier layer includes a) arranging a substrate including a nitride layer in a processing chamber; b) setting a process temperature in the processing chamber to a predetermined process temperature range; c) setting a process pressure in the processing chamber to a predetermined process pressure range; d) supplying at least one of a gas and a vapor including an organosilane precursor species; and e) depositing a barrier layer on the nitride layer. The barrier layer reduces diffusion of nitrogen-containing groups in the nitride layer into a photoresist layer that is subsequently deposited on the nitride layer.
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