Selective atomic layer deposition with post-dose treatment
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United States of America Patent
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Aug 28, 2018
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Jan 4, 2018
app pub date -
Jul 1, 2016
filing date -
Jul 1, 2016
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Abstract
Methods and apparatuses for depositing films in high aspect ratio features and trenches using a post-dose treatment operation during atomic layer deposition are provided. Post-dose treatment operations are performed after adsorbing precursors onto the substrate to remove adsorbed precursors at the tops of features prior to converting the adsorbed precursors to a silicon-containing film. Post-dose treatments include exposure to non-oxidizing gas, exposure to non-oxidizing plasma, and exposure to ultraviolet radiation.
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