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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
THE ARIZONA BOARD OF REGENTS ON BEHALF OF THE UNIVERSITY OF ARIZONA	THE UNIVERSITY OF ARIZONA TECH TRANSFER ARIZONA UNIVERSITY SERVICES ANNEX 4TH FLOOR PO BOX 210300A TUCSON AS 85721

International Classification(s)

• H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
• H01F:MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF M....

• 2017 Application Filing Year
• H01L Class
• 30754 Applications Filed
• 25260 Patents Issued To-Date
• 82.14 % Issued To-Date

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
ALMASI, Hamid	Tucson, US	4	8
# of filed Patents : 4 Total Citations : 8
WANG, Weigang	Tucson, US	31	203
# of filed Patents : 31 Total Citations : 203

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Patent Citation Ranking

• 6 Citation Count
• H01L Class

• 18.50 % this patent is cited more than
• 8 Age

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Full Text

US Patent Application No: 2017/0373,246

PERPENDICULAR MAGNETIC TUNNEL JUNCTION DEVICES WITH HIGH THERMAL STABILITY

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Abstract

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A perpendicular magnetic tunnel junction device (pMTJ) is provided that has a structure of a first heavy metal layer, a first thin dusting layer on the first heavy metal layer, a first CoFeB layer on the thin dusting layer, a MgO barrier layer on the first CoFeB layer, a second CoFeB layer on the MgO barrier layer, a second thin dusting layer on the CoFeB layer; and a second heavy metal layer on the thin dusting layer. The insertion of the thin dusting layer improves thermal stability of the pMTJ structure.

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Description

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Claims

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