Nitride semiconductor device
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United States of America Patent
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Jan 29, 2019
Grant Date -
Dec 28, 2017
app pub date -
Sep 7, 2017
filing date -
Mar 17, 2015
priority date (Note) -
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Abstract
A nitride semiconductor device is provided that includes: a substrate; an n-type drift layer above the front surface of the substrate; a p-type base layer above the n-type drift layer; a gate opening in the base layer that reaches the drift layer; an n-type channel forming layer that covers the gate opening and has a channel region; a gate electrode above a section of the channel forming layer in the gate opening; an opening that is separated from the gate electrode and reaches the base layer; an opening formed in a bottom surface of said opening and reaching the drift layer; a source electrode covering the openings; and a drain electrode on the rear surface of the substrate.
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