Depletion mode semiconductor devices including current dependent resistance
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 16, 2019
Grant Date -
Dec 28, 2017
app pub date -
Jun 22, 2017
filing date -
Jun 24, 2016
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A transistor device is provided. The transistor device includes a substrate, a channel layer on the substrate, the channel layer including a GaN material, a barrier layer that is on the channel layer and that includes an AlGaN material, a drain electrode that is on the barrier layer in a drain region of the device, a source ohmic structure that is at least partially recessed into the barrier layer in a source region of the device, a source electrode that is on the source ohmic structure and a gate contact that is on the barrier layer and that is in a gate region of the device that is between the drain region and the source region.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully