Gallium nitride high-electron mobility transistors with p-type layers and process for making the same
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United States of America Patent
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Aug 30, 2022
Grant Date -
Dec 28, 2017
app pub date -
Jun 24, 2016
filing date -
Jun 24, 2016
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Abstract
A high-electron mobility transistor includes a substrate layer, a first buffer layer provided on the substrate layer, a barrier layer provided on the first buffer layer, a source provided on the barrier layer, a drain provided on the barrier layer, and a gate provided on the barrier layer. The transistor further includes a p-type material layer having a length parallel to a surface of the substrate layer over which the first buffer layer is provided, the length of the p-type material layer being less than an entire length of the substrate layer. The p-type material layer is provided in one of the following: the substrate layer, or the first buffer layer. A process of making the high-electron mobility transistor is disclosed as well.
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