Methods of producing seed crystal substrates and group 13 element nitride crystals, and seed crystal substrates

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United States of America Patent

PATENT NO 10192738
APP PUB NO 20170372889A1
SERIAL NO

15699122

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Abstract

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A seed crystal layer is provided on a supporting body. A laser light is irradiated from a side of the supporting body to provide an altered portion along an interface between the supporting body and seed crystal layer. The altered layer is composed of a nitride of a group 13 element and has a portion into which dislocation defects are introduced or an amorphous portion.

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Patent Owner(s)

Patent OwnerAddress
NGK INSULATORS LTD2-56 SUDA-CHO MIZUHO-KU NAGOYA-SHI AICHI-PREFECTURE 467-8530

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sakai, Masahiro Nagoya, JP 99 768
Yoshino, Takashi Ama, JP 121 1040

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