Tantalum sputtering target, and production method therefor
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United States of America Patent
Stats
-
May 19, 2020
Grant Date -
Dec 28, 2017
app pub date -
May 17, 2016
filing date -
May 22, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Provided is a tantalum target, wherein, when a direction normal to a rolling surface (ND), which is a cross section perpendicular to a sputtering surface of a target, is observed via an electron backscatter diffraction pattern method, an area ratio of crystal grains of which a {100} plane is oriented in the ND is 30% or more. An object of the present invention is to provide a tantalum sputtering target in which a deposition rate can be appropriately controlled under high-power sputtering conditions. When sputter-deposition is performed using this kind of a tantalum target, it is possible to form a thin film having superior film thickness uniformity and improve the productivity of the thin film formation process, even for micro wiring.
First Claim
Other Claims data not available
Family
International Classification(s)
- 2016 Application Filing Year
- C23C Class
- 3247 Applications Filed
- 2111 Patents Issued To-Date
- 65.02 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 1 Citation Count
- C23C Class
- 58.45 % this patent is cited more than
- 5 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Nov 19, 2027 |
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