BILAYER HARDMASK
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Dec 28, 2017
app pub date -
Jun 28, 2016
filing date -
Jun 28, 2016
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
In one aspect, a method includes etching a magnetic field sensor element covered by a bilayer hardmask. In another aspect, a method includes depositing a silicon nitride on a magnetic field sensor element, depositing a silicon dioxide on the silicon nitride, forming the bilayer mask by etching the silicon dioxide and etching the magnetic field sensor element partially covered by the bilayer hardmask. The magnetic field sensor element includes one of a giant magnetoresistance (GMR) element, a tunneling magnetoresistance (TMR) element or a magnetic tunnel junction (MTJ). The bilayer mask includes the silicon dioxide and the silicon nitride. In a further aspect, a sensor includes a magnetic field sensor element that includes one of a GMR element, a TMR element or a MTJ. The sensor also includes a bilayer hardmask disposed on the magnetic field sensor element. The bilayer mask includes a silicon dioxide and a silicon nitride.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully