METHOD FOR PREPARING COPPER THIN FILM BY USING SINGLE CRYSTAL COPPER TARGET

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United States of America Patent

APP PUB NO 20170369986A1
SERIAL NO

15696393

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Abstract

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A method of manufacturing a copper thin film using a single-crystal copper target, and more particularly, a method of manufacturing a copper thin film using a single-crystal copper target, wherein a copper thin film is deposited on a sapphire disk substrate through high-frequency sputtering using a single-crystal copper target grown through a Czochralski process, and may thus exhibit high quality in terms of crystallinity. The method includes depositing a copper thin film on a sapphire disk substrate through a high-frequency sputtering process using a disk-shaped single-crystal copper target obtained by cutting cylindrical single-crystal copper grown through a Czochralski process.

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Patent Owner(s)

Patent OwnerAddress
PUSAN NATIONAL UNIVERSITY INDUSTRIAL UNIVERSITY COOPERATION FOUNDATION2-1 BUSANDAEHAK-RO 63BEON-GIL GEUMJEONG-GU BUSAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cho, Chae-ryong Busan, KR 2 1
Jeong, Se-young Busan, KR 39 922
Kim, Ji-young Yangsan-si, KR 199 2464
Lee, Seung-hun Ulsan, KR 77 1160
Lee, Tae-woo Daejeon, KR 145 1004
Park, Sang-eon Busan, KR 24 193

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