STACKS INCLUDING SOL-GEL LAYERS AND METHODS OF FORMING THEREOF

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United States of America Patent

SERIAL NO

15631463

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Abstract

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Provided are methods of forming stacks comprising a substrate and one or more sol-gel layers disposed on the substrate. Also provided are stacks formed by these methods. The sol-gel layers in these stacks, especially outer layers, may have a porosity of less than 1% or even less than 0.5%. In some embodiments, these layers may have a surface roughness (Ra) of less than 1 nanometers. The sol-gel layers may be formed using radiative curing and/or thermal curing at temperatures of between 400° C. and 700° C. or higher. These temperatures allow application of sol-gel layers on new types of substrates. A sol-gel solution, used to form these layers, may have colloidal nanoparticles with a size of less than 20 Angstroms on average. This small size and narrow size distribution is believed to control the porosity of the resulting sol-gel layers.

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Patent Owner(s)

Patent OwnerAddress
ADVENIRA ENTERPRISES INC788 PALOMAR AVENUE SUNNYVALE CA 94085

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dawley, Jeff Sunnyvale, US 2 9
Mah, Christopher Sunnyvale, US 1 1
Nagamedianova, Zoulfia Sunnyvale, US 4 6
Ryabova, Elmira Sunnyvale, US 17 199

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