Negative Capacitance Field Effect Transistor
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United States of America Patent
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Jun 15, 2016
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Jun 15, 2016
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Abstract
A gate structure of a negative capacitance field effect transistor (NCFET) is disclosed. The NCFET includes a gate stack disposed over a substrate. The gate stack includes a dielectric material layer, a ferroelectric ZrO2 layer and a first conductive layer. The NCFET also includes a source/drain feature disposed in the substrate adjacent the gate stack.
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