Manufacturing method for compound semiconductor device
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United States of America Patent
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Oct 30, 2018
Grant Date -
Dec 21, 2017
app pub date -
May 10, 2017
filing date -
Jun 20, 2016
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Abstract
A support substrate is bonded to a GaN epitaxial substrate including at least an electron transport layer and an electron supply layer grown on a growth substrate in the Ga-polar direction such that the support substrate faces the Ga-plane of the GaN epitaxial substrate. Furthermore, at least the growth substrate is removed from the GaN epitaxial substrate so as to expose an N-plane of the GaN epitaxial substrate. Subsequently, a semiconductor element is formed on the N-plane side.
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