Wide bandgap field effect transistors with source connected field plates
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United States of America Patent
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May 30, 2023
Grant Date -
Dec 21, 2017
app pub date -
Sep 5, 2017
filing date -
May 13, 2004
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Abstract
A field effect transistor comprising a buffer and channel layer formed successively on a substrate. A source electrode, drain electrode, and gate are all formed in electrical contact with the channel layer, with the gate between the source and drain electrodes. A spacer layer is formed on at least a portion of a surface of the channel layer between the gate and drain electrode and a field plate is formed on the spacer layer isolated from the gate and channel layer. The spacer layer is electrically connected by at least one conductive path to the source electrode, wherein the field plate reduces the peak operating electric field in the device.
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