CENTRAL SOURCE DELIVERY FOR CHEMICAL VAPOR DEPOSITION SYSTEMS
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Jun 5, 2017
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Jun 16, 2016
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According to embodiments, systems and methods are described herein that facilitate use of a Chemical Vapor Deposition (CVD) system continuously. The systems and methods shown herein include multiple precursor gas sources, and structures for independently connecting or disconnecting those sources for replacement. Furthermore, by providing user inputs for diluting the outputs of these multiple precursor gas sources, mixtures of precursor gas in carrier gas can be generated that have sufficiently low concentrations to be routed to a remove CVD system even at relatively low temperatures. Therefore, in embodiments many precursor gas sources, located remotely from the CVD chamber, can be independently operated and replaced as needed without interrupting a supply of precursor gas to the CVD chamber.
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