Chemical mechanical polishing (CMP) of cobalt-containing substrate

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United States of America Patent

PATENT NO 10745589
APP PUB NO 20170362466A1
SERIAL NO

15615236

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Abstract

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Chemical mechanical polishing (CMP) compositions, methods and systems for polish cobalt or cobalt-containing substrates are provided. The CMP compositions comprise α-alanine, abrasive particles, a salt of phosphate, corrosion inhibitor, oxidizer and water. The cobalt chemical mechanical polishing compositions provide high removal rate of Co as well as very high selectivity of Co film vs. dielectric film, such as TEOS, SixNy (with 1.0

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VERSUM MATERIALS US LLC8555 SOUTH RIVER PARKWAY PATENT DEPT TEMPE AS 85284

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  • 2017 Application Filing Year
  • B24B Class
  • 763 Applications Filed
  • 552 Patents Issued To-Date
  • 72.35 % Issued To-Date
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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Clore, Timothy Joseph Chandler, US 1 7
Grief, Malcolm Phoenix, US 27 731
O'Neill, Mark Leonard Queen Creek, US 111 11126
Rose, Joseph Chandler, US 12 36
Schlueter, James Allen Phoenix, US 21 108
Shi, Xiaobo Chandler, US 87 369

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