Systems and methods for rapidly fabricating nanopatterns in a parallel fashion over large areas
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United States of America Patent
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Feb 19, 2019
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Dec 21, 2017
app pub date -
Dec 8, 2015
filing date -
Dec 8, 2014
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Abstract
Nanopantography is a method for patterning nanofeatures over large areas. Transfer of patterns defined by nanopantography using highly selective plasma etching, with an oxide layer of silicon serving as a hard mask, can improve patterning speed and etch profile. With this method, high aspect ratio features can be fabricated in a substrate with no mask undercut. The ability to fabricate complex patterns using nanopantography, followed by highly selective plasma etching, provides improved patterning speed, feature aspect ratio, and etching profile.
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