Graphene-semiconductor based wavelength selective photodetector for sub-bandgap photo detection

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United States of America Patent

PATENT NO 10755866
APP PUB NO 20170352492A1
SERIAL NO

15614975

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Abstract

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Graphene photodetectors capable of operating in the sub-bandgap region relative to the bandgap of semiconductor nanoparticles, as well as methods of manufacturing the same, are provided. A photodetector can include a layer of graphene, a layer of semiconductor nanoparticles, a dielectric layer, a supporting medium, and a packaging layer. The semiconductor nanoparticles can be semiconductors with bandgaps larger than the energy of photons meant to be detected.

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Patent Owner(s)

  • THE UNIVERSITY OF HONG KONG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Jiawei Hong Kong, CN 51 32
Tang, Jinyao Hong Kong, CN 12 178
Xiong, Ze Hong Kong, CN 3 4

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