FIELD EFFECT TRANSISTOR AND SENSOR USING SAME
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Aug 6, 2015
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Aug 8, 2014
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A field effect transistor and a sensor using the field effect transistor is provided. The field effect transistor can be manufactured so as to have uniform properties by simple steps at low costs, and can stably detect, when used as a sensor, a very small amount of analyte with a high sensitivity while the properties are hardly deteriorated. A channel of the field effect transistor is constituted by a single-walled carbon nanotube thin film that is grown, by a chemical vapor deposition method, using particles of a nonmetallic material as growth nuclei, the nonmetallic material containing 500 mass ppm or less metallic impurities that contain a metal and its compounds.
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