Manifolds for uniform vapor deposition
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United States of America Patent
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May 26, 2020
Grant Date -
Dec 7, 2017
app pub date -
Jun 1, 2016
filing date -
Jun 1, 2016
priority date (Note) -
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Abstract
A semiconductor device comprising a manifold for uniform vapor deposition is disclosed. The semiconductor device can include a manifold comprising a bore and having an inner wall. The inner wall can at least partially define the bore. A first axial portion of the bore can extend along a longitudinal axis of the manifold. A supply channel can provide fluid communication between a gas source and the bore. The supply channel can comprise a slit defining an at least partially annular gap through the inner wall of the manifold to deliver a gas from the gas source to the bore. The at least partially annular gap can be revolved about the longitudinal axis.
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