Resistive memory with bird beak shaped structure method for fabricating the same and applications thereof
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United States of America Patent
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Aug 20, 2019
Grant Date -
Nov 30, 2017
app pub date -
Oct 12, 2016
filing date -
May 30, 2016
priority date (Note) -
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Abstract
A resistive memory includes a semiconductor substrate, a dielectric layer, an insulating layer and a metal electrode layer. The semiconductor substrate has a top surface and a recess extending downwards into the semiconductor substrate from the top surface. The dielectric layer is disposed on the semiconductor substrate and has a first through-hole aligning the recess. The insulating layer is disposed in the first through-hole and the recess. The metal electrode layer is disposed on the insulating layer by which the metal electrode layer is isolated from the semiconductor substrate.
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