SUPPORTING GLASS SUBSTRATE AND MANUFACTURING METHOD THEREFOR

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United States of America Patent

SERIAL NO

15541569

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Abstract

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A technical object of the present invention is to devise a supporting glass substrate suitable for supporting a substrate to be processed to be subjected to high-density wiring and a method of manufacturing the supporting glass substrate, to thereby contribute to an increase in density of a semiconductor package. The supporting glass substrate of the present invention has a thermal shrinkage ratio of 20 ppm or less when a temperature of the supporting glass substrate is increased from room temperature to 400° C. at a rate of 5° C./minute, kept at 400° C. for 5 hours, and decrease to room temperature at a rate of 5° C./minute.

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Patent Owner(s)

Patent OwnerAddress
NIPPON ELECTRIC GLASS CO LTD7-1 SEIRAN 2-CHOME OTSU-SHI SHIGA 520-8639

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KATAYAMA, Hiroki Shiga, JP 49 352

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