Fabrication of M-plane Gallium Nitride
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
Aug 19, 2016
filing date -
May 31, 2016
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
The present disclosure provides a fabrication of M-plane gallium nitride which is able to grow M-plane gallium nitride without the need of expensive substrates, such as LiAlO2, LiGaO2 or SiC. The fabrication of M-plane gallium nitride includes preparing a zinc oxide hexagonal prism having a growth face, and growing a gallium nitride layer on the growth face of the zinc oxide hexagonal prism. The growth face is an M-plane perpendicular to a direction of gravity.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully