Sensing amplifier comprising a built-in sensing offset for flash memory devices
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United States of America Patent
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Mar 6, 2018
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app pub date -
May 24, 2016
filing date -
May 24, 2016
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Abstract
The present invention relates to an improved sensing amplifier and related method for use in read operations in flash memory devices. In one embodiment, the sensing amplifier includes a built-in voltage offset. In another embodiment, a voltage offset is induced in the sensing amplifier through the use of capacitors. In another embodiment, the sensing amplifier utilizes sloped timing for the reference signal to increase the margin by which a “0” or “1” are detected from the current drawn by the selected cell compared to the reference cell. In an another embodiment, a sensing amplifier is used without any voltage offset.
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