CHEMICAL FOR PHOTOLITHOGRAPHY WITH IMPROVED LIQUID TRANSFER PROPERTY AND RESIST COMPOSITION COMPRISING THE SAME

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United States of America Patent

SERIAL NO

15669611

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Abstract

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A method of forming a pattern, the method including exposing under KrF excimer laser beams, a chemical for photolithography coated through spin coating, including a resin ingredient having a mass-average molecular weight (Mw) of 2000 to 50000 and an organic solvent having a saturated vapor pressure of 1 kPa or more (1 atm, 20° C.) and a viscosity of 1.1 cP (1 atm, 20° C.) or less.

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Patent Owner(s)

Patent OwnerAddress
TOKYO OHKA KOGYO CO LTD150 NAKAMARUKO NAKAHARA-KU KANAGAWA KAWASAKI-SHI 211-0012

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
SOMEYA, Yasuo Incheon, KR 7 3
YONEMURA, Koji Incheon, KR 29 169
YOON, Deuk Young Incheon, KR 2 3

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