FABRICATION METHOD FOR CASTING GRAPHENE QUANTUM DOTS ON LIGHT-EMITTING DIODES AND STRUCTURE THEREOF
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United States of America Patent
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Issued Date -
Nov 23, 2017
app pub date -
Aug 16, 2016
filing date -
May 19, 2016
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Abandoned
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Abstract
The present invention provides a fabrication method for casting graphene quantum dots on LEDs and the structure thereof. A graphene and an ethanol are mixed uniformly. After the laser ablation, centrifugal purification, and molecular filtration processes, a graphene quantum dots solution is produced. Afterwards, the graphene quantum dots solution is dripped on a light-emitting surface of an LED using a drop casting method. After the ethanol evaporates by standing still, a graphene-quantum-dot-cast layer is formed. The photocarriers in the graphene-quantum-dot-cast layer generated by the illumination of the LED can flow to the light-emitting surface of the LED and thus increasing the carrier concentration and the light-emitting quantum efficiency of the LED. Thereby, enhancing the fluorescent efficiency of the LED.
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