COMPLEMENTARY RESISTIVE SWITCHING MEMORY DEVICE HAVING THREE-DIMENSIONAL CROSSBAR-POINT VERTICAL MULTI-LAYER STRUCTURE
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Oct 12, 2015
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Oct 27, 2014
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Abstract
A complementary resistive switching (CRS) memory device having a three-dimensional crossbar-point vertical multi-layer structure is provided. The CRS memory device having a three-dimensional structure comprises: a conductive pillar; a plurality of CRS memory unit devices surrounding an outer circumferential surface of the conductive pillar and positioned to be spaced apart from each other; and a plurality of word electrode lines making contact with outer circumferential surfaces of the CRS memory unit devices and positioned so as to intersect the conductive pillar, wherein the CRS memory unit devices comprise: a first oxide semiconductor film surrounding the outer circumferential surface of the conductive pillar; a conductive film surrounding the first oxide semiconductor film; and a second oxide semiconductor film surrounding the conductive film. Therefore, a CRS memory device having a CRS-based three-dimensional crossbar-point vertical structure can be provided wherein a CRS device having a three-layer structure is applied as a unit device so as to enable efficient writing and reading without a selection device.
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